Driven by increasingly stringent energy efficiency and environmental regulations, the automotive sector is experiencing a rapid expansion in electronic functionalities, with hybrid electric vehicles (HEVs) and electric vehicles (EVs) becoming more popular. This shift is driving demand for energy-efficient and high-performance power semiconductor devices. As a global leader in automotive electronics and the second-largest provider of power discrete devices and modules, ON Semiconductor offers a diverse range of energy-efficient and reliable system solutions leveraging advanced wide bandgap materials like silicon carbide (SiC). The company is actively developing cutting-edge technologies such as SiC and gallium nitride (GaN) for applications in automotive electronics and HEV/EV systems.
Key Applications and Solutions for HEVs/EVsMajor applications in HEVs/EVs include onboard chargers, battery management systems, traction inverters, auxiliary inverters, 48V belt starter generators (BSGs), and DC-DC converters. A typical high-voltage application block diagram for HEVs/EVs is illustrated in Figure 1. The AC power source feeds DC power into the vehicle charger, which then charges the high-voltage battery. Meanwhile, the battery powers the main inverter, the auxiliary high-voltage inverter, and the high-voltage PTC heater. Additionally, the vehicle includes numerous low-voltage loads that require HV-LV DC-DC converters to provide power.
Figure 1: Typical High-Voltage Application Block Diagram for HEVs/EVs
For vehicle chargers, trench IGBT discrete devices and modules, super-junction MOSFETs, SiC MOSFET discrete devices, and modules can serve as PFC boost switches and DC-DC full bridges. Rectifiers are utilized for input and output rectifier bridges and PFC boost applications. For the main inverter, IGBT dies, SiC MOSFET dies, discrete devices, and modules can be employed. For HV-LV DC-DC converters, trench IGBT discrete devices and modules, super-junction MOSFETs, and SiC MOSFET discrete devices and modules can act as full bridges, while rectifiers are used for output rectifier bridges. For auxiliary inverters, trench IGBT discrete devices and modules are applicable. For high-voltage PTC heaters, trench and planar IGBT discrete devices are available. For 48V BSGs, a medium-voltage MOSFET module can be used.
Automotive IGBT Discrete DevicesON Semiconductor’s IGBT technology is industry-leading, progressing from early through-type (PT) and non-punch-through (NPT) designs to the current field-stop (FS) planar and trench processes. The characteristics of FS IGBTs include low conduction and switching losses, a positive temperature coefficient for parallel operation, a maximum junction temperature of Tj = 175°C, tight parameter distribution, and a large safe operating area (SOA). Currently, ON Semiconductor’s third-generation field-stop (FSIII) process performance is nearing the industry’s top tier, with FSIV development planned for 2018.
ON Semiconductor offers automotive-grade discrete IGBTs with voltages ranging from 600V to 650V and currents from 20A to 160A, with D2PAK and TO247 options available. Table 1 outlines ON Semiconductor’s discrete IGBT lineup for HEVs.
Table 1: ON Semiconductor’s Discrete IGBT Lineup for HEVs
In addition to discrete devices and modules, ON Semiconductor also offers automotive-grade dies. The company’s mass-produced IGBT and fast recovery diode (FRD) dies are primarily 650V products with currents of 160A, 200A, and 300A. We are also actively developing 750V and 1200V IGBT and FRD dies. ON Semiconductor offers IGBT dies with integrated current sensing and temperature sensing. The current sense function measures the current of a small parallel IGBT and multiplies it by a known scaling factor, improving current detection accuracy over temperature. The temperature sensing function uses the forward voltage VF of a string of polysilicon diodes, which is linearly related to temperature, serving as an accurate temperature sensor for the silicon junction.
Automotive High-Voltage RectifiersBased on specific applications, rectifiers can be chosen for lower conduction losses or lower switching losses. The main features and applications of various products are depicted in Figure 2.
Figure 2: Technical Positioning of the Rectifier
ON Semiconductor’s mass-produced automotive-grade high-voltage rectifiers include 600V, 1000V, and 1200V options, with currents ranging from 4A to 80A, available in various package options such as DPAK, TO220, and TO247. Table 2 lists ON Semiconductor’s automotive-grade high-voltage rectifier lineup.
Table 2: ON Semiconductor’s Automotive-Grade High-Voltage Rectifier Lineup
Traction Inverter Power ModulesON Semiconductor has pioneered a two-sided heat-dissipating automotive high-voltage power module for traction inverters, utilizing dual-sided solderable process wafers for integrated current and temperature sensing. This design combines a compact layout to achieve superior thermal and electrical performance: reducing thermal resistance by approximately 40%, with stray inductance as low as 7nH. Its modular construction enhances power density, reducing size, weight, and cost for compact system designs. The optimal trench performance is achieved by combining the best trench field-stop IGBT with a soft recovery diode. A single die with ultra-low parasitics enables a simplified gate driver with additional surface for passive cooling of other electronics such as bus capacitors and precision sensors for high-speed and accurate system diagnostics.
Available in 650V and 1200V voltage ratings and rated currents from 400A to 1000A, the modules are available in a wide range of power ratings up to 6 for complete hybrid inverter power transmission systems including boost converters, achieving the lowest system cost.
Its modular and versatile design allows for horizontal and vertical assembly. For horizontal mounting, the power supply pins support screws, solder, or solder connections, offering various pin bend options. The signal pins support press-fit options. For vertical installations, the ultra-compact 3D concept is ideal for hybrid electric vehicles and plug-in hybrid electric vehicles (HEVs & PHEVs), integrating inverters, generators, and DC-DC boosters into a single liquid cooling system.
Automotive Super Junction (SJ) MOSFETsSJ MOSFETs are new MOSFETs that employ charge-balancing techniques to achieve excellent low on-resistance and low gate charge performance, minimizing conduction losses and providing outstanding switching performance. Figure 3 illustrates the evolution of 650V SJ MOSFET technology.
Figure 3: Evolution of 650V SJ MOSFET Technology
The SJ MOSFET versions are compared as follows:
The fast version minimizes Crss. Key features include: energy-efficient, hard-switching topology, reduced Qg and Eoss, primarily for boost PFC, full bridge, bidirectional Buck-Boost, and semi-bridgeless PFC.
The easy-to-drive version features built-in Rg, low gate oscillation, low EMI and voltage spikes, easy drive, lower control Coss, hard/soft-switching topology, etc. Primarily used for boost PFC, semi-bridgeless PFC, and phase Move DC-DC.
The fast recovery version is mainly realized through carrier lifetime control. The main features are: fast body diode, small Qrr and Trr, strong diode, better reliability, soft resonant switch, primarily used in LLC, LCC, dual topology such as source bridge type DC-DC.
In the same package, SuperFET® III is nearly 50% smaller than SuperFET® II’s Rds(on), providing higher power density for high-power onboard charging systems, requiring fewer parallel MOSFETs, thus reducing layout crosstalk of the parallel devices.
The mass-produced automotive SJ MOSFET and die lineup offered by ON Semiconductor is shown in Table 3.
Table 3: ON Semiconductor’s SJ MOSFET and Die Lineup
Wide Bandgap (WBG) SemiconductorsWide bandgap semiconductor materials, represented by SiC and GaN, are referred to as the third-generation semiconductor materials. They possess characteristics such as a large bandgap, high breakdown electric field, and high thermal conductivity, providing excellent switching performance, temperature stability, and low electromagnetic interference (EMI). For instance, SiC has 10 times the dielectric breakdown strength of silicon (Si), twice the electron saturation speed, three times the energy bandgap, and three times the thermal conductivity, enabling higher switching frequencies. This supports smaller magnetic and passive components, reducing the size and cost of the overall system. The use of SiC results in a lighter system compared to Si-based traction inverters or vehicle chargers, requiring less cooling and delivering higher energy efficiency, which increases the cruising range per charge. GaN exhibits excellent breakdown capability, higher electron density and speed, and higher operating temperatures. Its high electron mobility ensures better switching performance, while low losses and high junction temperatures reduce heat dissipation. The high switching frequency reduces the need for filters and passive components, ultimately decreasing system size and weight and enhancing power density.
ON Semiconductor is the sole supplier offering both GaN and SiC devices and is actively developing more devices to meet the demands of HEV/EV automotive applications.
Automotive High-Voltage Auxiliary Intelligent Power Modules (IPMs)The target applications for automotive high-voltage auxiliary IPMs encompass all auxiliary IPMs in pure electric vehicles, plug-in hybrid vehicles, heavy hybrid vehicles, medium-duty hybrid vehicles, and fuel cell vehicles, including high-pressure cooling fans, turbochargers, air-conditioning compressors, high-pressure electric water pumps/oil pumps/fuel pumps, etc.
The automotive high-voltage IPM module is based on an excellent DBC substrate with ultra-low thermal resistance, ensuring Tj=175°C. It provides industry-leading temperature cycling tests and power supply reliability for long life and excellent ruggedness, even in cases of short circuits lasting more than 5us. It is integrated into a highly compact and integrated package, incorporating 6 power devices/HVIC/DBC/comprehensive protection, etc., with a short design cycle and assembly process to optimize IPM performance, providing stable EMI and heat performance.
ON Semiconductor is currently developing the ASPM® 27 Series V2 and ASPM® 34 series for automotive electric air conditioning compressors, automotive fans, superchargers, and oil pumps/water pumps.
Automotive Power ModulesWith leading packaging technology, semiconductor design, manufacturing capabilities, and fast response capabilities, ON Semiconductor offers automotive power modules ranging from 0.8kW to 20kW and voltages from 12V to 470V for applications such as electric power steering, braking and acceleration skid protection systems (ARS), air conditioning compressors, superchargers, belt/integrated starter generators, DC-DC converters, battery switches, vehicle chargers, and more. Customized package designs and solutions are provided according to customer needs, with quick responses.
The lineup of ON Semiconductor’s standard APM19 and APM17 automotive modules is shown in Table 4.
Table 4: ON Semiconductor’s APM19 and APM17 Automotive Module Lineups
In SummaryAs a leader in automotive electronics and the world's second-largest provider of power discrete devices and module semiconductors, ON Semiconductor boasts industry-leading IGBTs, MOSFETs, WBG technology, and innovative and efficient power module packages. The company offers a broad range of energy-efficient, high-reliability automotive power semiconductors that can be customized according to customer needs. Through its world-class supply chain, ON Semiconductor meets the evolving demands of automotive functionalities and various applications.
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