Driven by increasingly strict energy efficiency and environmental regulations, the automotive sector is witnessing a surge in electronic functionalities and the rising adoption of hybrid electric vehicles (HEVs) and electric vehicles (EVs). This shift has heightened the demand for energy-efficient and high-performance power semiconductor devices. As a global leader in automotive electronics and the second-largest supplier of power discrete devices and modules, ON Semiconductor offers a diverse range of energy-efficient and highly reliable system solutions, leveraging advanced wide bandgap materials like silicon carbide. Their latest product developments, including silicon carbide (SiC) and gallium nitride (GaN), cater to automotive functions and HEV/EV applications.
Key Applications and Solutions for HEV/EVHEV/EV applications include vehicle chargers, battery management systems, traction inverters, auxiliary inverters, 48V belt starter generators (BSGs), and DC-DC converters. A typical HEV/EV high-voltage application block diagram is depicted in Figure 1. The AC power source converts to DC via the vehicle charger, and the battery management system charges the high-voltage battery. Simultaneously, the high-voltage battery powers the main inverter, the auxiliary high-voltage inverter, and the high-voltage PTC heater. Besides these high-voltage loads, HEV/EV vehicles also feature numerous low-voltage loads that necessitate HV-LV DC-DC converters for power provision.
Figure 1: Typical HEV/EV High-Voltage Application Block Diagram
For vehicle chargers, trench IGBT discrete devices and modules, super-junction MOSFETs, SiC MOSFET discrete devices, and modules can serve as PFC boost switches and DC-DC full bridges, while rectifiers act as input and output rectifier bridges and in PFC boost applications. For the main inverter, IGBT dies, SiC MOSFET dies, discrete devices, and modules are utilized. For HV-LV DC-DC converters, trench IGBT discrete devices and modules, super-junction MOSFETs, and SiC MOSFET discrete devices and modules can serve as full bridges, and rectifiers are used as output rectifier bridges. For auxiliary inverters, trench IGBT discrete devices and modules are employed. For high-voltage PTC heaters, trench and planar IGBT discrete devices are available. For 48V BSGs, a medium-voltage MOSFET module can be used.
Automotive IGBT Discrete DevicesON Semiconductor’s IGBT technology leads the industry, progressing from early through-type (PT), non-punch-through (NPT), to the current field-stop (FS) planar and trench processes. The FS IGBT features include low conduction and switching losses, a positive temperature coefficient for parallel operation, a maximum junction temperature of Tj = 175°C, tight parameter distribution, and a large safe operating area (SOA). Currently, ON Semiconductor’s third-generation FS III process performance approaches the industry's top level, with FS IV development beginning in 2018.
ON Semiconductor offers automotive-grade discrete IGBTs with voltages ranging from 600V to 650V and currents from 20A to 160A, available in D2PAK and TO247 options.
Table 1: ON Semiconductor’s Discrete IGBT Lineup for HEV
Besides traditional discrete devices and modules, ON Semiconductor also provides automotive-grade dies. Their mass-produced IGBT and fast recovery diode (FRD) dies are primarily 650V products with currents of 160A, 200A, and 300A. Additionally, they are actively developing 750V and 1200V IGBT and FRD dies.
ON Semiconductor offers IGBT dies with integrated current sensing and temperature sensing. The current sense function is implemented by measuring the current of a small parallel IGBT and multiplying it by a known scaling factor. It is suitable for overcurrent, chipset algorithms to improve current detection accuracy over temperature. The temperature sensing function is implemented by measuring the forward voltage VF of a string of polysilicon diodes. The VF is linearly related to temperature and serves as an accurate temperature sensor for the silicon junction.
Automotive High-Voltage RectifiersDepending on the application, rectifiers can be chosen for lower conduction loss or lower switching loss. The main features and applications of various products are illustrated in Figure 2.
Figure 2: Technical Positioning of the Rectifier
ON Semiconductor’s mass-produced automotive-grade high-voltage rectifiers include 600V, 1000V, and 1200V models with currents ranging from 4A to 80A, available in multiple package options such as DPAK, TO220, and TO247.
Table 2: ON Semiconductor’s Automotive Grade High-Voltage Rectifier Lineup
Traction Inverter Power ModulesON Semiconductor has pioneered a two-sided heat-dissipating automotive high-voltage power module for traction inverters, utilizing dual-sided solderable process wafers for integrated current and temperature sensing. Combined with a compact layout, this achieves superior thermal and electrical performance: thermal resistance is reduced by approximately 40%, with stray inductance as low as 7nH. Its modular design increases power density, reduces size, weight, and cost for compact system designs. The optimal trench performance is achieved by the best trench field-stop IGBT with soft recovery diodes. A single die with ultra-low parasitics enables a simplified gate driver with additional surface for passive cooling of other electronics such as bus capacitors and precision sensors for high-speed and accurate system diagnostics.
Available in 650V and 1200V voltage ratings and rated currents from 400A to 1000A, the modules are available in a wide range of power ratings up to 6 for complete hybrid inverter power transmission systems including boost converters. This achieves the lowest system cost.
Its modular and versatile design enables horizontal and vertical assembly. For horizontal mounting, the power supply pins support screws, solder, or solder connections, offering various pin bend options. The signal pins support press-fit options. For vertical installations, the ultra-compact 3D concept is ideal for hybrid electric vehicles and plug-in hybrid electric vehicles (HEV & PHEV), integrating inverters, generators, and DC-DC boosters into a single liquid-cooling system.
Automotive Super Junction (SJ) MOSFETSJ MOSFETs are new MOSFETs that utilize charge-balancing techniques to achieve excellent low on-resistance and low gate charge performance, minimizing conduction losses and providing excellent switching performance. Figure 3 shows the evolution of the 650V SJ MOSFET technology.
Figure 3: 650V SJ MOSFET Technology Evolution
The SJ MOSFET versions are compared as follows:
The fast version is implemented by minimizing Crss. Key features include: energy-efficient, hard-switching topology, reduced Qg and Eoss, mainly for boost PFC, full bridge, bidirectional Buck-Boost, semi-bridgeless PFC.
The easy-to-drive version with built-in Rg, low gate oscillation, low EMI and voltage spikes, easy drive, lower control Coss, hard/soft switching topology, etc. is mainly used for boost PFC, semi-bridgeless PFC, phase Move DC-DC.
The fast recovery version is mainly realized by carrier lifetime control. The main features are: fast body diode, small Qrr and Trr, strong diode, better reliability, soft resonant switch, mainly used in LLC, LCC, dual topology such as source bridge type DC-DC.
In the same package, SuperFET® III is nearly 50% smaller than SuperFET® II’s Rds(on), providing higher power density for high-power on-board charging systems, and fewer parallel MOSFETs require less space. Thus, the layout crosstalk of the parallel devices is made smaller.
The mass-produced automotive SJ MOSFET and die lineup offered by ON Semiconductor is shown in Table 3.
Table 3: ON Semiconductor’s SJ MOSFET and Die Lineup
Wide Band Gap (WBG)The wide bandgap semiconductor material, represented by SiC and GaN, is referred to as the third-generation semiconductor material, characterized by a large bandgap, high breakdown electric field, and high thermal conductivity, offering excellent switching performance, temperature stability, and low electromagnetic interference (EMI). For instance, SiC has 10 times higher dielectric breakdown strength than silicon (Si), twice the electron saturation speed, three times the energy bandgap, three times the thermal conductivity, and higher switching frequencies, supporting smaller magnetic and passive components, reducing system size and cost. Using SiC reduces the weight of the system compared to a Si-based traction inverter or vehicle charger, requires less cooling, and provides higher energy efficiency, increasing the cruising range per charge. GaN boasts excellent breakdown capability, higher electron density and speed, and higher operating temperatures. Its high electron mobility ensures better switching performance, while low loss and high junction temperature reduce heat dissipation. The high switching frequency reduces the need for filters and passive components, ultimately reducing system size and weight and increasing power density.
ON Semiconductor is the only supplier offering both GaN and SiC devices and is actively developing more devices to meet the needs of HEV/EV automotive applications.
Automotive High-Voltage Auxiliary Intelligent Power Module (IPM)The target applications for automotive high-voltage auxiliary IPMs are all auxiliary IPMs in pure electric vehicles, plug-in hybrid vehicles, heavy hybrid vehicles, medium-duty hybrid vehicles, and fuel cell vehicles, including high-pressure cooling fans, turbochargers, air-conditioning compressors, high-pressure electric water pumps/oil pumps/fuel pumps, etc.
The automotive high-voltage IPM module is based on an excellent DBC substrate with ultra-low thermal resistance, ensuring Tj=175°C, providing best-in-class temperature cycling tests and power supply reliability for long life and excellent ruggedness. Even in the worst-case scenario, it can withstand short circuits for more than 5us. Integrated in a highly integrated and compact package, it combines 6 power devices/HVIC/DBC/comprehensive protection, etc., with a short design cycle and assembly process to achieve fully optimized IPM with stable EMI and heat performance.
ON Semiconductor is currently developing the ASPM® 27 Series V2 and ASPM® 34 series for automotive electric air conditioning compressors, automotive fans, superchargers, and oil pumps/water pumps.
Automotive Power ModulesWith leading packaging technology, semiconductor design, manufacturing capabilities, and fast response capabilities, ON Semiconductor offers automotive power modules from 0.8kW to 20kW and voltages from 12V to 470V for electric power steering, braking and acceleration skid protection systems (ARS), air conditioning compressors, superchargers, belt/integrated starter generators, DC-DC converters, battery switches, vehicle chargers, and other applications. They also customize different package designs and solutions according to customer needs and provide fast responses.
The lineup of ON Semiconductor’s standard APM19 and APM17 automotive modules is shown in Table 4.
Table 4: ON Semiconductor’s APM19 and APM17 Automotive Module Lineups
To Sum UpAs a global leader in automotive electronics and the world’s second-largest supplier of power discrete devices and module semiconductors, ON Semiconductor offers best-in-class IGBTs, MOSFETs, WBG technology, and innovative and efficient power module packages. They provide a wide range of energy-efficient, high-reliability automotive power semiconductors, customizable to meet customer needs, through a world-class supply chain, aligning with the electronic trends in automotive functions and meeting the needs of various applications.
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