2 silicon floor flip method. Eutectic solder, first, prepare a large LED panel light chip and prepare a suitable size on a silicon substrate and a silicon substrate, using a gold eutectic solder layer and a conductive layer conductor (ultrasonic gold wire ball joint) And an LED chip and a large-sized silicon substrate that are soldered together with the eutectic solder of the mobile device. This structure is more reasonable, not only to consider this issue, but also to consider the issue of light and heat, which is the mainstream high-power LED production. Lumileds, Inc. in the United States in 2001 developed a different flip-chip power supply for the AlGaInN (FCLED) structure, manufacturing process: the first P-type GaN epitaxial film deposited on the top layer thickness exceeds 500A, and the return reflection Niau The ohmic contact is then selectively etched, using a mask, in the P-type layer and the multiple quantum well active layer, exposing the N-type layer deposition, and forming the 1 mm x 1 mm side of the N-type ohmic contact layer 1 after etching P-type ohmic contact, N-type ohmic contact is inserted into the comb, the chip size, so that the current extended distance can be shortened to minimize the ESD protection diode (ESD) silicon chip supporting the diffusion resistance of indium gallium aluminum nitride Install the inverted solder bumps.
3 ceramic plate flip method. The general structure of the crystal structure of the LED panel light chip of the LED chip of the next large, eutectic solder layer and conductive layer on the ceramic plate and ceramic substrate, the corresponding leads produced in this area, the use of crystal LED in the welding electrode Soldering equipment for chip and large-size ceramic sheets. Such a structure is a problem to be considered, and it is also a problem to be considered. Light, heat, use of high thermal conductivity ceramic plates, ceramic plates, heat dissipation effect is very good, the price is relatively low, more suitable for the current basic packaging materials and space reserved for Future integration of integrated circuits.
4 sapphire substrate transition method. The manufacturer of the PN junction after removal of the sapphire substrate, the InGaN chip is grown on the sapphire substrate, and then the conventional quaternary material is connected to the lower electrode of the large-structured blue LED chip by a conventional method.
5AlGaInN method of silicon carbide (SiC) back light. CREE is the world's only manufacturer of AlGaInN ultra-high brightness LEDs for silicon carbide substrates. The architecture of AlGaInN / SICA chips produced over the years has been continuously improved and brightness has been increased. Since the P-type and N-type electrodes are respectively located at the top and bottom of the chip, using a single wire bond, better compatibility, and ease of use, it has become another mainstream product development of AlGaInNLED.
Feature:
1.Material:The parts the wearer touches are not made of materials that can cause skin irritation
2.Structure:Smooth surface, no burr, no acute Angle and other defects that may cause eye and face discomfort.
It has good air permeability.
Adjustable parts and structural parts are easy to adjust and replace.
3.Package:The products are properly packaged and are accompanied by product certificates and instructions
4.fixing band : The minimum width of the headband in contact with the wearer is 11.5mm. The headband is adjustable, soft and durable
5.The appearance quality of the lens: the surface of the lens is smooth and free from scratches, ripples, bubbles, impurities, and other obvious defects that may impair vision
6.Diopter: 0.04D
7.The difference between the prism degrees of the left and right eye lenses: 0.12
8.Visible light transmission ratio: colorless transparent lens 89.35
9.Impact resistance: qualified
10.Protection performance of chemical fog drops: there is no color spot on the test paper within the center of the lens
11.Irritant gas protection performance: there is no color spot on the test paper within the center of the lens
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Guangzhou HangDeng Tech Co. Ltd , https://www.hangdengtech.com