Introduction: As a pivotal element in electric energy conversion, IGBT stands as the core component of the electronic control systems in new energy vehicles and DC charging stations. Over the next few years, China's new energy vehicle and charging station markets are poised to experience explosive growth. As the essential device at the heart of these systems, IGBT is set to enjoy a golden era of development.
New energy drives, IGBT holds vast potential for growth. IGBT (Insulated Gate Bipolar Transistor) is a sophisticated power semiconductor device that combines various functions into one. Known globally as the representative product of the third technological revolution in power electronics, IGBT boasts high-frequency operation, high voltage tolerance, and the ability to handle large currents while maintaining ease of switching. These exceptional qualities have earned it the nickname "the CPU of power converters" within the industry.
IGBT contributes significantly to energy efficiency and environmental protection, making it an indispensable choice for future applications. Its versatility allows it to be widely applied across traditional and emerging sectors like automotive electronics, consumer electronics, and renewable energy, ensuring a promising market outlook.
The unique attributes of IGBT make it particularly suitable for use in strategic emerging industries such as electric vehicles. As the core component of the electric vehicle's electronic control system and DC charging stations, IGBT represents 10% of the cost of electric vehicles and up to 20% of the cost of charging stations. With government policies driving the adoption of new energy vehicles and charging infrastructure, the Chinese market is set to see explosive growth. This presents a golden opportunity for IGBT, which is expected to drive the demand for over 20 billion IGBT modules over the next five years.
However, there is a glaring gap in China’s semiconductor industry. Despite being the world's largest market for power semiconductors, accounting for over half of global demand, IGBT remains dominated by foreign manufacturers. European and American firms dominate the IGBT market thanks to superior product quality and advanced technology, serving as the primary suppliers to China's market.
Back in 2008, when China's first high-speed rail line—the Beijing-Tianjin Intercity Railway—opened, followed by others like the Wuhan-Guangzhou High-Speed Rail, the demand for IGBTs skyrocketed. Each eight-car standard high-speed train requires 152 IGBT modules, costing nearly two million yuan per unit. Annually, China’s high-speed rail manufacturing sector purchases over 100,000 IGBT modules from overseas suppliers, spending over 1.2 billion yuan.
An IGBT module costs around 15,000 RMB, yet only finished products are sold. Even CRRC Zhuzhou, a leader in China’s traction electric drive technology, spends hundreds of millions of dollars annually purchasing IGBT products from foreign entities.
The monopoly on technology and market leads to prolonged procurement cycles, often lasting several months or more. If this situation persists, it will not only hinder the sustainable growth of China’s power electronics industry but also severely impede the progress of strategic emerging industries, particularly in areas like rail transit, renewable energy, and flexible DC transmission. This is a pressing issue that demands attention.
To address this challenge, developing independent IGBT chip designs and creating a comprehensive IGBT supply chain—from chip development to module packaging and system application testing—has become a national priority. Achieving self-sufficiency in IGBT production is crucial for securing China’s place in the global semiconductor landscape and ensuring the long-term success of its emerging industries.
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