[High-tech LED News] According to Japanese media reports, Tohoku University and Roma have increased the luminescence intensity of ZnO (zinc oxide)-based UV LEDs to 100 μW, which is 10,000 times that of the original products. It is about the relationship between InGaN and GaN-based UV LEDs. 110 times.
According to the research team, the MBE (Molecular Beam Epitaxy) method was used in the manufacture of LED components, and the Doping method without radical gas was developed. This is expected to use the MOCVD (Organic Metal Vapor Deposition) method with higher mass production. The intended use is a white LED for backlights and illuminations for liquid crystal displays.
The research team pointed out that white LEDs using UV LEDs are expected to improve color rendering and color reproducibility compared to InGaN and GaN-based white LEDs with blue LEDs and yellow phosphors.
In addition, the group also said that it is difficult to purchase high-quality low-cost single-crystal substrates when manufacturing GaN-based LEDs, but ZnO-based LEDs can easily synthesize single-crystal substrates. Therefore, it is expected that the LED element using a single crystal substrate can be mass-produced at a relatively low cost, and the substrate can easily match the light-emitting layer and the grid.
Professor Kawasaki Yasushi of Tohoku University said that this achievement clarified the way forward to catch up with GaN products.
According to the research team, the MBE (Molecular Beam Epitaxy) method was used in the manufacture of LED components, and the Doping method without radical gas was developed. This is expected to use the MOCVD (Organic Metal Vapor Deposition) method with higher mass production. The intended use is a white LED for backlights and illuminations for liquid crystal displays.
The research team pointed out that white LEDs using UV LEDs are expected to improve color rendering and color reproducibility compared to InGaN and GaN-based white LEDs with blue LEDs and yellow phosphors.
In addition, the group also said that it is difficult to purchase high-quality low-cost single-crystal substrates when manufacturing GaN-based LEDs, but ZnO-based LEDs can easily synthesize single-crystal substrates. Therefore, it is expected that the LED element using a single crystal substrate can be mass-produced at a relatively low cost, and the substrate can easily match the light-emitting layer and the grid.
Professor Kawasaki Yasushi of Tohoku University said that this achievement clarified the way forward to catch up with GaN products.
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